收藏本站
DS1230Y/AB
(T A = +25 ° C)
PARAMETER
Expected Data Retention Time
SYMBOL
t DR
MIN
10
TYP
MAX
UNITS
years
NOTES
9
WARNING:
Under no circumstance are negative undershoots, of any amplitude, allowed when device is in battery
backup mode.
NOTES:
1. WE is high for a Read Cycle.
2. OE = V IH or V IL . If OE = V IH during write cycle, the output buffers remain in a high-impedance state.
3. t WP is specified as the logical AND of CE and WE . t WP is measured from the latter of CE or WE
going low to the earlier of CE or WE going high.
4. t DH , t DS are measured from the earlier of CE or WE going high.
5. These parameters are sampled with a 5 pF load and are not 100% tested.
6. If the CE low transition occurs simultaneously with or latter than the WE low transition, the output
buffers remain in a high-impedance state during this period.
7. If the CE high transition occurs prior to or simultaneously with the WE high transition, the output
buffers remain in high-impedance state during this period.
8. If WE is low or the WE low transition occurs prior to or simultaneously with the CE low transition,
the output buffers remain in a high-impedance state during this period.
9. Each DS1230 has a built-in switch that disconnects the lithium source until the user first applies V CC .
The expected t DR is defined as accumulative time in the absence of V CC starting from the time power
is first applied by the user. This parameter is assured by component selection, process control, and
design. It is not measured directly during production testing.
10. All AC and DC electrical characteristics are valid over the full operating temperature range. For
commercial products, this range is 0 ° C to 70 ° C. For industrial products (IND), this range is -40 ° C to
+85 ° C.
11. In a power-down condition the voltage on any pin may not exceed the voltage on V CC .
12. t WR1 and t DH1 are measured from WE going high.
13. t WR2 and t DH2 are measured from CE going high.
14. DS1230 modules are recognized by Underwriters Laboratories (UL) under file E99151.
DC TEST CONDITIONS
Outputs Open
Cycle = 200 ns for operating current
All voltages are referenced to ground
AC TEST CONDITIONS
Output Load: 100 pF + 1TTL Gate
Input Pulse Levels: 0 - 3.0V
Timing Measurement Reference Levels
Input: 1.5V
Output: 1.5V
Input pulse Rise and Fall Times: 5 ns
8 of 10
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
DS1245AB-120IND+ IC SRAM NV 128KX8 5.25V 32-DIP
DS1245W-100IND+ IC NVSRAM 1MBIT 100NS 32DIP
DS1245Y-70IND+ IC NVSRAM 1MBIT 70NS 32DIP
DS1249AB-85IND# IC NVSRAM 2048KBIT 85NS 32DIP
DS1249W-100IND# IC NVSRAM 2MBIT 100NS 32DIP
DS1249Y-70IND# IC NVSRAM 2MBIT 70NS 32DIP
DS1250AB-70IND+ IC NVSRAM 4MBIT 70NS 32DIP
DS1250W-150+ IC NVSRAM 4MBIT 150NS 32DIP
相关代理商/技术参数
DS1230Y-P100IND 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:256k Nonvolatile SRAM
DS1230YP-100-IND 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:256k Nonvolatile SRAM
DS1230Y-P120 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:256k Nonvolatile SRAM
DS1230YP-120 制造商:未知厂家 制造商全称:未知厂家 功能描述:NVRAM (Battery Based)
DS1230Y-P120IND 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:256k Nonvolatile SRAM
DS1230YP-120-IND 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:256k Nonvolatile SRAM
DS1230Y-P150 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:256k Nonvolatile SRAM
DS1230YP-150 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:256k Nonvolatile SRAM